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Ion implantation is a materials engineering process by which ions of a material are accelerated in an electrical field and impacted into another solid. This process is used to change the physical, chemical, or electrical properties of the solid. Ion implantation is used in semiconductor device fabrication and in metal finishing, as well as various applications in materials science research.

Ion implantation equipment typically consists of an ion source, where ions of the desired element are produced, an accelerator, where the ions are electrostatically accelerated to a high energy, and a target chamber, where the ions impinge on a target, which is the material to be implanted. Thus ion implantation is a special case of particle radiation. Each ion is typically a single atom or molecule, and thus the actual amount of material implanted in the target is the integral over time of the ion current. This amount is called the dose. The currents supplied by implanters are typically small (microamperes), and thus the dose which can be implanted in a reasonable amount of time is small. Therefore, ion implantation finds application in cases where the amount of chemical change required is small.


Advantages of Ion Implantation:

  • Very precise control of the dose
  • Independent control of impurity depth and dose
  • Very fast (1 6" wafer can take as little as 6 seconds for a moderate dose)
  • Can perform retrograde profiles that peak at points inside the wafer (as opposed to the wafer surface)
  • Complex profiles can be achieved by multi-energy implants

Applications of Ion Implantation:

  • Doping
  • Silicon on insulator
  • Mesotaxy
  • Surface finishing
  • Tool steel toughening
  • Ion beam mixing

TLWM offers molybdenum and tungsten ion sources and parts to large, medium and high-energy beam ion implantors。 They make it possible that the beam is precisely guided and the electrons are generated at temperatures up to 1600°C。


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